Auger generation as an intrinsic limit to tunneling field-effect transistor performance
- James T. Teherani
- Sapan Agarwal
- et al.
- 2016
- Journal of Applied Physics
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23 results for Dimitri A. Antoniadis
Ultrathin Body InGaAs MOSFETs on III-V-On-Insulator Integrated with Silicon Active Substrate (III-V-OIAS)
- Jianqiang Lin
- Lukas Czornomaz
- et al.
- 2016
- IEEE T-ED
Strained Si1-xGex-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2014
- VLSI Technology 2014
An Ambipolar Virtual-Source-Based Charge-Current Compact Model for Nanoscale Graphene Transistors
- Shaloo Rakheja
- Yanqing Wu
- et al.
- 2014
- IEEE TNANO
Ultra-thin-body self-aligned InGaAs MOSFETs on insulator (III-V-O-I) by a tight-pitch process
- Jianqiang Lin
- Lukas Czornomaz
- et al.
- 2014
- DRC 2014
Record hole mobility at high vertical fields in planar strained germanium on insulator with asymmetric strain
- Winston Chern
- Pouya Hashemi
- et al.
- 2014
- IEEE Electron Device Letters
Analysis of carrier transport in short-channel MOSFETs
- Amlan Majumdar
- Dimitri A. Antoniadis
- 2014
- IEEE T-ED
Compact model for carbon nanotube field-effect transistors including nonidealities and calibrated with experimental data down to 9-nm gate length
- Jieying Luo
- Lan Wei
- et al.
- 2013
- IEEE T-ED
Corrections to "on the ballistic injection velocity in deeply scaled MOSFETs"
- Yang Liu
- Mathieu Luisier
- et al.
- 2012
- IEEE T-ED
Room-temperature carrier transport in high-performance short-channel Silicon nanowire MOSFETs
- Amlan Majumdar
- Sarunya Bangsaruntip
- et al.
- 2012
- IEDM 2012