Critical Elements for Next Generation High Performance Computing Nanosheet TechnologyR. BaoC. Durfeeet al.2021IEDM 2021
Enabling Next Generation CMOS by Novel EOT Scaling ModuleLin DongSteven Hunget al.2021VLSI Technology 2021
Challenges and Opportunities for Stacked Transistor: DTCO and DeviceJ. WangS.D. Suket al.2021VLSI Technology 2021
Selective Enablement of Dual Dipoles for near Bandedge Multi-Vt Solution in High Performance FinFET and Nanosheet TechnologiesRuqiang BaoK. Watanabeet al.2020VLSI Technology 2020
NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet TransistorHuimei ZhouMiaomiao Wanget al.2020IRPS 2020
Multiple-Vt Solutions in Nanosheet Technology for High Performance and Low Power ApplicationsRuqiang BaoReinaldo A. Vegaet al.2019IEDM 2019
Ultra-scaled Conformal Scavenging Electrode with Superior Tunability for Short-channel RMG FinFET Workfunction and all-ALD 3D-compatible ReRAMJohn RozenK. Suuet al.2019IEDM 2019