Novel fluoropolymers for use in 157 nm lithography
- Hiroshi Ito
- G.M. Wallraff
- et al.
- 2001
- J. Photopolym. Sci. Tech.
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41 results for Gregory Breyta
Factors controlling pattern formation in chemically amplified resists at sub-100 nm dimensions
- W.D. Hinsberg
- F.A. Houle
- et al.
- 1999
- J. Photopolym. Sci. Tech.
Platform-dependent properties of 193nm single layer resists
- Robert D. Allen
- Thomas I. Wallow
- et al.
- 1998
- J. Photopolym. Sci. Tech.
Etch selectivity of 4SiMA: Hydroxystyrene based copolymers. silicon chemistry for bilayer resist systems
- G.M. Wallraff
- Carl E. Larson
- et al.
- 1998
- J. Photopolym. Sci. Tech.
The influence of photoacid structure on the design and performance of 193-nm resists
- Robert D. Allen
- Juliann Opitz
- et al.
- 1997
- J. Photopolym. Sci. Tech.
Dissolution kinetics and PAG interaction of phenolic resins in chemically amplified resists
- Hiroshi Ito
- Debra-Fenzel Alexander
- et al.
- 1997
- J. Photopolym. Sci. Tech.
Progress in 193 nm positive resists
- R.D. Allen
- R. Soortyakumaran
- et al.
- 1996
- J. Photopolym. Sci. Tech.
193 nm photoresist r&d: the risk & challenge
- Donald C. Hofer
- Robert Allen
- et al.
- 1996
- J. Photopolym. Sci. Tech.
Lithographic feasibility of escap beyond quarter micron
- Hiroshi Ito
- Greg Breyta
- et al.
- 1996
- J. Photopolym. Sci. Tech.
Approach toward environmental stabilization of chemical amplification resists
- Hiroshi Ito
- William P. England
- et al.
- 1993
- J. Photopolym. Sci. Tech.