A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
At minimum feature dimensions below 100 nm, the required dimensional tolerances for pattern formation in integrated circuit fabrication approach the length scales of the molecular components and processes typically found in a resist film. This paper summarizes recent experimental work aimed at an improved understanding of photoacid diffusion and line-edge roughness, two key factors that influence dimensional control in chemically amplified resists. © 1999 TAPJ.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
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Physica B: Physics of Condensed Matter
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