High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor
- B. Yang
- R. Takalkar
- et al.
- 2008
- IEDM 2008
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7 results for Andrew Turansky
Novel enhanced stressor with graded embedded SiGe source/drain for high performance CMOS devices
- J.-P. Han
- H. Utomo
- et al.
- 2006
- IEDM 2006
Design of high performance PFETs with strained Si channel and laser anneal
- Z. Luo
- Y.F. Chong
- et al.
- 2005
- IEDM 2005
A hydrogen pre-bake process for Si epitaxy on sige surface
- H. Chen
- S.W. Bedell
- et al.
- 2004
- ECS Meeting 2004
SIMS measurement of hydrogen and deuterium detection limits in silicon: Comparison of different SIMS instrumentation
- F.A. Stevie
- Chaunzhen Zhou
- et al.
- 2016
- JVSTB
Role of interfacial oxygen on the quality and strain stability of pseudomorphic silicon-germanium layers grown on Si substrates
- Stephen W. Bedell
- Thomas N. Adam
- et al.
- 2011
- Journal of Crystal Growth
SIMS quantification of SiGe composition with low-energy ion beams
- Zhengmao Zhu
- Paul Ronsheim
- et al.
- 2011
- Surface and Interface Analysis