Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11%
- John Hart
- Thomas Adam
- et al.
- 2016
- Journal of Applied Physics
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39 results for Thomas Adam
Optical properties of pseudomorphic Ge1-xSnx (x = 0 to 0.11) alloys on Ge(001)
- Manasa Medikonda
- Gangadhara R. Muthinti
- et al.
- 2014
- JVSTB
Observation of semiconductor device channel strain using in-line high resolution X-ray diffraction
- Judson R. Holt
- Anita Madan
- et al.
- 2013
- Journal of Applied Physics
High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET
- K. Cheng
- A. Khakifirooz
- et al.
- 2012
- IEDM 2012
Microstructure development in epitaxially grown in-situ Boron and Carbon co-doped strained 60% Silicon-Germanium layers
- Alexander Reznicek
- Thomas N. Adam
- et al.
- 2012
- ECS Meeting 2012
Strain engineered extremely thin SOI (ETSOI) for high-performance CMOS
- A. Khakifirooz
- Kangguo Cheng
- et al.
- 2012
- VLSI Technology 2012
Effects of stress on the dielectric function of strained pseudomorphic Si 1-xGe x alloys from 0 to 75 Ge grown on Si (001)
- Gangadhara Raja Muthinti
- Manasa Medikonda
- et al.
- 2012
- Journal of Applied Physics
Effect of germanium concentration on the dielectric function of strained Si 1-xGe x films
- Manasa Medikonda
- Gangadhara R. Muthinti
- et al.
- 2012
- ISTDM 2012
Strained high percentage (60%) boron doped silicon-germanium alloys - Strain, dopant substitionality, carrier concentration, resistivity, and microstructure development
- Alexander Reznicek
- Thomas N. Adam
- et al.
- 2012
- ISTDM 2012
Effect of thermal annealing on carbon in in-situ phosphorous-doped Si 1-xC x films
- Thomas Adam
- Nicolas Loubet
- et al.
- 2012
- Thin Solid Films