Scalability of ultra-thin-body and BOX InGaAs MOSFETs on silicon
- Lukas Czornomaz
- N. Daix
- et al.
- 2013
- ESSDERC 2013
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19 results for Nicolas Daix
III-V heterostructure-on-insulator for strain studies in n-InGaAs channels
- P. Weigele
- Lukas Czornomaz
- et al.
- 2013
- ULIS 2013
Ultrathin Body InGaAs MOSFETs on III-V-On-Insulator Integrated with Silicon Active Substrate (III-V-OIAS)
- Jianqiang Lin
- Lukas Czornomaz
- et al.
- 2016
- IEEE T-ED
Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
- V. Djara
- Lukas Czornomaz
- et al.
- 2016
- Solid-State Electronics
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells
- George Zerveas
- E. Caruso
- et al.
- 2016
- Solid-State Electronics
Electrical characterisation of InGaAs on insulator structures
- K. Cherkaoui
- Y.Y. Gomeniuk
- et al.
- 2015
- Microelectronic Engineering
Towards large size substrates for III-V co-integration made by direct wafer bonding on Si
- Nicolas Daix
- Emanuele Uccelli
- et al.
- 2014
- APL Materials
Strain effects on n-InGaAs heterostructure-on-insulator made by direct wafer bonding
- Christophe Rossel
- P. Weigele
- et al.
- 2014
- Solid-State Electronics
Heterointegration by molecular beam epitaxy: (In, Ga)As/GaAs quantum wells on GaAs, Ge, Ge/Si and Ge/Si pillars
- M. Richter
- Emanuele Uccelli
- et al.
- 2013
- Journal of Crystal Growth