III/V layer growth on Si and Ge surfaces for direct wafer bonding as a path for hybrid CMOS
- Emanuele Uccelli
- Nicolas Daix
- et al.
- 2014
- ITNG 2014
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19 results for Nicolas Daix
Co-integrating high mobility channels for future CMOS, from substrate to circuits
- Lukas Czornomaz
- Nicolas Daix
- et al.
- 2014
- IPRM 2014
Strain effects on n-InGaAs heterostructure-on-insulator made by direct wafer bonding
- Christophe Rossel
- P. Weigele
- et al.
- 2014
- Solid-State Electronics
Co-integration of InGaAs n- and SiGe p-MOSFETs into digital CMOS circuits using hybrid dual-channel ETXOI substrates
- Lukas Czornomaz
- N. Daix
- et al.
- 2013
- IEDM 2013
Thermal stability of ultra-thin InGaAs-on-insulator substrates
- N. Daix
- Lukas Czornomaz
- et al.
- 2013
- S3S 2013
Scalability of ultra-thin-body and BOX InGaAs MOSFETs on silicon
- Lukas Czornomaz
- N. Daix
- et al.
- 2013
- ESSDERC 2013
III-V heterostructure-on-insulator for strain studies in n-InGaAs channels
- P. Weigele
- Lukas Czornomaz
- et al.
- 2013
- ULIS 2013
Heterointegration by molecular beam epitaxy: (In, Ga)As/GaAs quantum wells on GaAs, Ge, Ge/Si and Ge/Si pillars
- M. Richter
- Emanuele Uccelli
- et al.
- 2013
- Journal of Crystal Growth
An integration path for gate-first UTB III-V-on-insulator MOSFETs with silicon, using direct wafer bonding and donor wafer recycling
- Lukas Czornomaz
- N. Daix
- et al.
- 2012
- IEDM 2012