Comprehensive reliability evaluation of a 90 nm CMOS technology with Cu/PECVD low-k BEOL
- D. Edelstein
- H.S. Rathore
- et al.
- 2004
- IRPS 2004
Publications
Date
Featured collections
Popular topics
72 results for Stephen M. Gates
Ash-induced modification of porous and dense SiCOH inter-level-dielectric (ILD) materials during damascene plasma processing
- T. Dalton
- N. Fuller
- et al.
- 2004
- IITC 2004
Comprehensive reliability evaluation of a 90 nm CMOS technology with Cu/PECVD low-k BEOL
- D. Edelstein
- H.S. Rathore
- et al.
- 2004
- IRPS 2004
The study of modified layers in SiCOH dielectrics using spectroscopic ellipsometry
- Marcus A. Worsley
- Stacey F. Bent
- et al.
- 2003
- MRS Proceedings 2003
Mechanisms and models of Si film growth from SiH4 and Si2H6
- S. Gates
- S.K. Kulkarni
- et al.
- 1990
- Symposium on Process Physics and Modeling in Semiconductor Technology 1990
Sequential lateral solidification of silicon thin films on low-k dielectrics for low temperature integration
- Fabio Carta
- Stephen M. Gates
- et al.
- 2014
- Applied Physics Letters
Sequential Lateral Solidification of Silicon Thin Films on Cu BEOL-Integrated Wafers for Monolithic 3-D Integration
- Fabio Carta
- Stephen M. Gates
- et al.
- 2015
- IEEE T-ED
Corrosion in low dielectric constant Si-O based thin films: Buffer concentration effects
- F.W. Zeng
- Stephen M. Gates
- et al.
- 2014
- AIP Advances
Effect of low-frequency radio frequency on plasma-enhanced chemical vapor deposited ultra low-κ dielectric films for very large-scale integrated interconnects
- E. T. Todd Ryan
- Stephen M. Gates
- et al.
- 2014
- Journal of Applied Physics
Progress in the development and understanding of advanced low k and ultralow k dielectrics for very large-scale integrated interconnects - State of the art
- Alfred Grill
- Stephen M. Gates
- et al.
- 2014
- Applied Physics Reviews