Future of PECVD and spin-on ultra low-k materials
- Willi Volksen
- Theo Frot
- et al.
- 2011
- IITC/MAM 2011
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72 results for Stephen M. Gates
Adjusting the skeleton and pore structure of porous SiCOH dielectrics
- S. Gates
- G. Dubois
- et al.
- 2009
- JES
Property modifications of nanoporous pSiCOH dielectrics to enhance resistance to plasma-induced damage
- E. Todd Ryan
- Stephen M. Gates
- et al.
- 2008
- Journal of Applied Physics
Interface engineering for high interfacial strength between SiCOH and porous SiCOH interconnect dielectrics and diffusion caps
- A. Grill
- D. Edelstein
- et al.
- 2008
- Journal of Applied Physics
Preparation and structure of porous dielectrics by plasma enhanced chemical vapor deposition
- S. Gates
- D. Neumayer
- et al.
- 2007
- Journal of Applied Physics
Detection of open or closed porosity in low-κ dielectrics by solvent diffusion
- Marcus A. Worsley
- Mark Roberts
- et al.
- 2005
- Microelectronic Engineering
Effect of plasma interactions with low-κ films as a function of porosity, plasma chemistry, and temperature
- Marcus A. Worsley
- Stacey F. Bent
- et al.
- 2005
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Reliability, yield, and performance of a 90 nm SOI/Cu/SiCOH technology
- D. Edelstein
- C.R. Davis
- et al.
- 2004
- IITC 2004
Optimization of SiCOH dielectrics for integration in a 90 nm CMOS technology
- A. Grill
- D. Edelstein
- et al.
- 2004
- IITC 2004
90 nm SiCOH technology in 300 mm manufacturing
- L. Clevenger
- M. Yoon
- et al.
- 2004
- ADMETA 2004