A compact virtual-source model for carbon nanotube FETs in the sub-10-nm regime - Part II: Extrinsic elements, performance assessment, and design optimizationChi-Shuen LeeEric Popet al.2015IEEE T-ED
A Compact Virtual-Source Model for Carbon Nanotube FETs in the Sub-10-nm Regime-Part I: Intrinsic ElementsChi-Shuen LeeEric Popet al.2015IEEE T-ED
Compact model for carbon nanotube field-effect transistors including nonidealities and calibrated with experimental data down to 9-nm gate lengthJieying LuoLan Weiet al.2013IEEE T-ED