High performance 14nm SOI FinFET CMOS technology with 0.0174μm2 embedded DRAM and 15 levels of Cu metallization
- C.-H.C-H. Lin
- Brian Greene
- et al.
- 2014
- IEDM 2014
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16 results for Kevin McStay
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
- S. Krishnan
- U. Kwon
- et al.
- 2011
- IEDM 2011
A 0.039um2 high performance eDRAM cell based on 32nm high-K/metal SOI technology
- Nauman Z. Butt
- Kevin McStay
- et al.
- 2010
- IEDM 2010
Scaling deep trench based eDRAM on SOI to 32nm and beyond
- G. Wang
- D. Anand
- et al.
- 2009
- IEDM 2009
A 0.127 μm2 high performance 65 nm SOI based embedded DRAM for on-processor applications
- G. Wang
- K. Cheng
- et al.
- 2006
- IEDM 2006
Deposited ALD SiO2 high-k/metal gate interface for high voltage analog and I/O devices on next generation alternative channels and FINFET device structures
- S. Siddiqui
- M.M. Chowdhury
- et al.
- 2013
- ECS Meeting 2013
Revisiting the impact on sub-threshold regions in uniaxially-strained FETs
- M.H. Na
- K. Mcstay
- et al.
- 2013
- CSTIC 2013
Performance analysis and modeling of deep trench decoupling capacitor for 32 nm high-performance SOI processors and beyond
- Balaji Jayaraman
- Sneha Gupta
- et al.
- 2012
- ICICDT 2012
Characterization of novel TiN/HfO2 metal insulator semiconductor stack for 32nm eDRAM
- Puneet Goyal
- Sneha Gupta
- et al.
- 2010
- IEEE International SOI Conference 2010
High performance 32nm SOI CMOS with high-k/metal gate and 0.149μm 2 SRAM and ultra low-k back end with eleven levels of copper
- B. Greene
- Q. Liang
- et al.
- 2009
- VLSI Technology 2009