Sub-10 nm carbon nanotube transistor
- Aaron D. Franklin
- Shu-Jen Han
- et al.
- 2011
- IEDM 2011
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144 results for Lynne Gignac
Multiple double cross-section transmission electron microscope sample preparation of specific sub-10 nm diameter Si nanowire devices
- Lynne M. Gignac
- Surbhi Mittal
- et al.
- 2011
- Microscopy and Microanalysis
Effect of impurity on Cu electromigration
- C.-K. Hu
- Matthew Angyal
- et al.
- 2010
- International Workshop STRESS-INDUCED PHENOMENA IN METALLIZATION 2010
CoWP metal caps for reliable 32 nm 1X Cu interconnects in porous ULK (k=2.4)
- E. Huang
- M. Oh
- et al.
- 2009
- ADMETA 2009
Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm
- Sarunya Bangsaruntip
- A. Majumdar
- et al.
- 2010
- VLSI Technology 2010
Gate-all-around silicon nanowire MOSFETs and circuits
- Jeffrey W. Sleight
- Sarunya Bangsaruntip
- et al.
- 2010
- DRC 2010
Interface state density measurements in gated p-i-n silicon nanowires as a function of the nanowire diameter
- Guy Cohen
- E. Cartier
- et al.
- 2010
- DRC 2010
High performance and highly uniform metal hi-k gate-all-around silicon nanowire mosfets
- Jeffrey W. Sleight
- Sarunya Bangsaruntip
- et al.
- 2010
- ECS Transactions
Trigate 6T SRAM scaling to 0.06 μm2
- M. Guillorn
- J. Chang
- et al.
- 2009
- IEDM 2009
High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling
- S. Bangsaruntip
- G.M. Cohen
- et al.
- 2009
- IEDM 2009