Shimon Levi, Ishai Schwarzband, et al.
SPIE Advanced Lithography 2014
We demonstrate undoped-body, gate-all-around (GAA) Si nanowire (NW) MOSFETs with excellent electrostatic scaling. These NW devices, with a TaN/Hf-based gate stack, have high drive-current performance with NFET/PFET IDSAT 825/950 μA/μm (circumference-normalized) or 2592/2985 μA/μm (diameter-normalized) at supply voltage VDD = 1 V and off-current IOFF = 15 nA/μm. Superior NW uniformity is obtained through the use of a combined hydrogen annealing and oxidation process. Clear scaling of short-channel effects versus NW size is observed. ©The Electrochemical Society.
Shimon Levi, Ishai Schwarzband, et al.
SPIE Advanced Lithography 2014
Jeffrey W. Sleight, Sarunya Bangsaruntip, et al.
DRC 2010
Jeffrey W. Sleight, Sarunya Bangsaruntip, et al.
DRC 2010
Lynne M. Gignac, Surbhi Mittal, et al.
Microscopy and Microanalysis