Mobility and CMOS devices/circuits on sub-10nm (110) ultra thin body SOI
- Huiling Shang
- J. Rubino
- et al.
- 2005
- VLSI Technology 2005
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37 results for Huiling Shang
A low voltage SANOS nonvolatile semiconductor Memory (NVSM) device
- Yijie Zhao
- Xiaonan Wang
- et al.
- 2005
- ISDRS 2005
On the scalability and carrier transport of advanced CMOS devices
- Meikei Ieong
- Leland Chang
- et al.
- 2005
- ICICDT 2005
Scaling beyond conventional CMOS device
- Meikei Ieong
- Bruce Doris
- et al.
- 2004
- ICSICT 2004
Fabrication, device design and mobility enhancement of germanium channel MOSFETs
- Huiling Shang
- E. Gousev
- et al.
- 2004
- ICSICT 2004
Channel design and mobility enhancement in strained germanium buried channel MOSFETs
- H. Shang
- J.O. Chu
- et al.
- 2004
- VLSI Technology 2004
Recent progress in devices and materials for CMOS technology
- H.-S. Philip Wong
- B. Doris
- et al.
- 2003
- VLSI-TSA 2003
0.25 V FDSOI CMOS technology for ultra-low voltage applications
- Hulling Shang
- Marvin H. White
- et al.
- 2002
- IEEE International SOI Conference 2002
Understanding short channel mobility degradation by accurate external resistance decomposition and intrinsic mobility extraction
- Tao Chu
- Reinaldo A. Vega
- et al.
- 2015
- Journal of Applied Physics
Gate-induced-drain-leakage current in 45-nm CMOS technology
- Xiaohin Yuan
- Jae-Eun Park
- et al.
- 2008
- IEEE T-DMR