K. Cheng, A. Khakifirooz, et al.
IEDM 2009
In this letter, we report self-aligned n-channel germanium (Ge) MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate electrode. Excellent off-state current is achieved through the reduction of junction leakage. For the first time, we have demonstrated an n-channel Ge MOSFET with a subthreshold slope of 150 mV/dec and an on-off current ratio of ∼10 4.
K. Cheng, A. Khakifirooz, et al.
IEDM 2009
Huilong Zhu, Kam-Leung Lee, et al.
SISPAD 2002
K.L. Lee, F. Cardone, et al.
IEDM 2003
P. Solomon, K.W. Guarini, et al.
IEEE Circuits and Devices Magazine