Huilong Zhu, Kam-Leung Lee, et al.
SISPAD 2002
In this letter, we report self-aligned n-channel germanium (Ge) MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate electrode. Excellent off-state current is achieved through the reduction of junction leakage. For the first time, we have demonstrated an n-channel Ge MOSFET with a subthreshold slope of 150 mV/dec and an on-off current ratio of ∼10 4.
Huilong Zhu, Kam-Leung Lee, et al.
SISPAD 2002
M. Yang, K.K. Chan, et al.
VLSI Technology 2006
C. Cabral Jr., J. Kedzierski, et al.
VLSI Technology 2004
E. Gusev, C. Cabral Jr., et al.
IEDM 2004