Materials interaction at the nanoscale in high-k metal gate stacks: The role of oxygen
- S. Guha
- E.J. Preisler
- et al.
- 2005
- ECS Meeting 2005
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76 results for Nestor Bojarczuk
Interfacial oxide formation from intrinsic oxygen in W-HfO2 gated silicon field-effect transistors
- E.J. Preisler
- S. Guha
- et al.
- 2004
- Applied Physics Letters
Advanced gate stacks with fully silicided (FUSI) gates and high-κ dielectrics: Enhanced performance at reduced gate leakage
- E. Gusev
- C. Cabral Jr.
- et al.
- 2004
- IEDM 2004
Charge trapping in aggressively scaled metal gate/high-κ stacks
- E. Gusev
- V. Narayanan
- et al.
- 2004
- IEDM 2004
Systematic study of pFET Vt with Hf-based gate stacks with poly-Si and FUSI gates
- E. Cartier
- V. Narayanan
- et al.
- 2004
- VLSI Technology 2004
Ultrathin Al2O3 and HfO2 gate dielectrics on surface-nitrided Ge
- James Jer-Hueih Chen
- Nestor A. Bojarczuk Jr.
- et al.
- 2004
- IEEE Transactions on Electron Devices
Epitaxial silicon and germanium on buried insulator heterostructures and devices
- N.A. Bojarczuk
- M. Copel
- et al.
- 2003
- Applied Physics Letters
Electrical characteristics of metal - (La0.27Y 0.73)2O3 - Silicon capacitors
- E.J. Preisler
- N.A. Bojarczuk
- et al.
- 2003
- MRS Proceedings 2003
Hall Mobility in Hafnium Oxide Based MOSFETs: Charge Effects
- L.Å. Ragnarsson
- N.A. Bojarczuk
- et al.
- 2003
- IEEE Electron Device Letters
Epitaxial Si films grown on lattice matched (LaxY 1-x)O3/Si (111) structures by molecular beam epitaxy
- V. Narayanan
- S. Guha
- et al.
- 2002
- MRS Proceedings 2002