(110) Channel, SiON gate-dielectric PMOS with record high Ion=1 mA/μm through channel stress and source drain external resistance (R ext) engineering
- B. Yang
- A. Waite
- et al.
- 2007
- IEDM 2007
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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11 results for Seong-Dong Kim
Novel enhanced stressor with graded embedded SiGe source/drain for high performance CMOS devices
- J.-P. Han
- H. Utomo
- et al.
- 2006
- IEDM 2006
An integrated methodology for accurate extraction of S/D series resistance components in nanoscale MOSFETs
- Seong-Dong Kim
- Shreesh Narasimha
- et al.
- 2005
- IEDM 2005
Performance trade-offs in FinFET and gate-all-around device architectures for 7nm-node and beyond
- Seong-Dong Kim
- Michael Guillorn
- et al.
- 2015
- S3S 2015
Si nanowire CMOS fabricated with minimal deviation from RMG FinFET technology showing record performance
- Isaac Lauer
- Nicolas Loubet
- et al.
- 2015
- VLSI Technology 2015
Exploring MOL design options for a 20nm CMOS technology using TCAD
- Andreas Scholze
- Stephen Furkay
- et al.
- 2011
- SISPAD 2011
Modeling gate-pitch scaling impact on stress-induced mobility and external resistance for 20nm-node MOSFETs
- Seong-Dong Kim
- Sameer Jain
- et al.
- 2010
- SISPAD 2010
CMOS fabricated by hybrid-orientation technology (HOT)
- Bin Yang
- M. Yang
- et al.
- 2007
- IEDST 2007
Optimization of DUV lithography for high-energy well implantation
- Ryan Deschner
- Seong-Dong Kim
- et al.
- 2007
- SPIE Advanced Lithography 2007
Optimum location of silicide/Si interface in ultra-thin body SOI MOSFETs with recessed and elevated silicide source/drain contact structure
- Seong-Dong Kim
- 2009
- Solid-State Electronics