Fabrication of high performance 512Kb SRAMs in 0.25 μm CMOS technology using x-ray lithography
- R. Viswanathan
- David Seeger
- et al.
- 1994
- Microelectronic Engineering
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26 results for Thomas Bucelot
A room temperature 0.1 μm CMOS on SOI
- G. Shahidi
- C. Blair
- et al.
- 1993
- VLSI Technology 1993
A high performance 0.15 μm CMOS
- G. Shahidi
- J. Warnock
- et al.
- 1993
- VLSI Technology 1993
Indium Channel Implant for Improved Short-Channel Behavior of Submicrometer NMOSFET's
- G. Shahidi
- Bijan Davari
- et al.
- 1993
- IEEE Electron Device Letters
Enhanced performance of accumulation mode 0.5 μ m CMOS/SOI operated at 300 K and 85 K
- L.K. Wang
- J. Seliskar
- et al.
- 1991
- IEDM 1991
Temperature dependent transport measurements on strained Si/Si1-xGex resonant tunneling devices
- Ulf Gennser
- V.P. Kesan
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
A 4-Mb Low-Temperature DRAM
- Rick L. Mohler
- Christopher W. Long
- et al.
- 1991
- IEEE Journal of Solid-State Circuits
Low temperature SER and noise in a high speed DRAM
- W.H. Henkels
- N.C.-C. Lu
- et al.
- 1989
- Workshop on Low Temperature Semiconductor Electronics 1989
Low-resistance submicron CVD W interlevel via plugs on Al-Cu-Si
- R.V. Joshi
- S.B. Brodsky
- et al.
- 1989
- VMIC 1989
Low temperature 12 ns DRAM
- W.H. Henkels
- N.C.-C. Lu
- et al.
- 1989
- VLSI-TSA 1989