TIN formed by ion beam nitriding of TiSi2
- S.E. Harnstrarn
- D. Moy
- et al.
- 1989
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
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Effects of processing conditions on the characteristics of platinum silicide Schottky barrier diodes
- D. Moy
- S. Basavaiah
- et al.
- 1988
- Solid State Electronics
Source-Drain Contact Resistance in CMOS with Self-Aligned TiSi2
- Yuan Taur
- Jack Yuan-Chen Sun
- et al.
- 1987
- IEEE T-ED