Critical Elements for Next Generation High Performance Computing Nanosheet Technology
- R. Bao
- C. Durfee
- et al.
- 2021
- IEDM 2021
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20 results for John Rozen
Ultra-scaled Conformal Scavenging Electrode with Superior Tunability for Short-channel RMG FinFET Workfunction and all-ALD 3D-compatible ReRAM
- John Rozen
- K. Suu
- et al.
- 2019
- IEDM 2019
Metal-oxide based, CMOS-compatible ECRAM for Deep Learning Accelerator
- S. Kim
- John A. Ott
- et al.
- 2019
- IEDM 2019
ECRAM as Scalable Synaptic Cell for High-Speed, Low-Power Neuromorphic Computing
- Jianshi Tang
- Douglas M. Bishop
- et al.
- 2018
- IEDM 2018
Electrical characterization of FinFETs with fins formed by directed self assembly at 29 nm fin pitch using a self-aligned fin customization scheme
- Hsinyu Tsai
- Hiroyuki Miyazoe
- et al.
- 2014
- IEDM 2014
High-performance CMOS-compatible self-aligned In0.53Ga0.47As MOSFETs with GMSAT over 2200 μs/μm at VDD = 0.5 v
- Yanning Sun
- Amlan Majumdar
- et al.
- 2014
- IEDM 2014
High Mobility High-Ge-Content SiGe PMOSFETs Using Al2O3/HfO2 Stacks with In-Situ O3 Treatment
- Takashi Ando
- Pouya Hashemi
- et al.
- 2017
- IEEE Electron Device Letters
CMOS compatible high performance IIIV devices: Opportunities and challenges
- Yanning Sun
- Kuen-Ting Shiu
- et al.
- 2016
- ECS Meeting 2016
Transient Investigation of Metal-oxide based, CMOS-compatible ECRAM
- Paul Solomon
- Douglas M. Bishop
- et al.
- 2021
- IRPS 2021
Reliability Challenges with Materials for Analog Computing
- Eduard Cartier
- Wanki Kim
- et al.
- 2019
- IRPS 2019