RFCMOS technology from 0.25μm to 65nm: The state of the art
- J.J. Pekarik
- D.R. Greenberg
- et al.
- 2004
- CICC 2004
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50 results for Greg Freeman
SiGe heterojunction bipolar transistors and circuits toward terahertz communication applications
- Jae-Sung Rieh
- Basanth Jagannathan
- et al.
- 2004
- IEEE T-MTT
SiGe HBTs for millimeter-wave applications with simultaneously optimized f T and f max of 300 GHz
- J.-S. Rieh
- D.R. Greenberg
- et al.
- 2004
- RFIC 2004
Low-noise performance near BVCEO in a 200 GHz SiGe technology at different collector design points
- D.R. Greenberg
- S. Sweeney
- et al.
- 2003
- IMS 2003
3.9 ps SiGe HBT ECL ring oscillator and transistor design for minimum gate delay
- Basanth Jagannathan
- Mounir Meghelli
- et al.
- 2003
- IEEE Electron Device Letters
Noise performance scaling in high-speed silicon RF technologies
- D.R. Greenberg
- S. Sweeney
- et al.
- 2003
- SiRF 2003
Sige HBT performance and reliability trends through fT of 350GHz
- Greg Freeman
- Jae-Sung Rieh
- et al.
- 2003
- IRPS 2003
Integrated SiGe and Si device capabilities and trends for multi-gigahertz applications
- G. Freeman
- B. Jagannathan
- et al.
- 2003
- International Journal of High Speed Electronics and Systems
100 GHz dynamic frequency divider in SiGe bipolar technology
- A. Rylyakov
- L. Klapproth
- et al.
- 2003
- Electronics Letters
Foundation of rf CMOS and SiGe BiCMOS technologies
- James S. Dunn
- David C. Ahlgren
- et al.
- 2003
- IBM J. Res. Dev