40-Gb/s circuits built from a 120-GHz f T SiGe technology
- Greg Freeman
- Mounir Meghelli
- et al.
- 2002
- IEEE Journal of Solid-State Circuits
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50 results for Greg Freeman
HBT low-noise performance in a 0.18 μm SiGe BiCMOS technology
- D.R. Greenberg
- D. Ahlgren
- et al.
- 2000
- RFIC 2000
Impact of technology scaling in sub-100 nm nMOSFETs on total-dose radiation response and hot-carrier reliability
- Rajan Arora
- Zachary E. Fleetwood
- et al.
- 2014
- IEEE TNS
An investigation of single event transient response in 45-nm and 32-nm SOI RF-CMOS devices and circuits
- Troy D. England
- Rajan Arora
- et al.
- 2013
- IEEE TNS
Trade-offs between RF performance and total-dose tolerance in 45-nm RF-CMOS
- Rajan Arora
- En Xia Zhang
- et al.
- 2011
- IEEE TNS
Impact of lateral asymmetric channel doping on 45-nm-technology N-Type SOI MOSFETs
- Hasan M. Nayfeh
- Nivo Rovedo
- et al.
- 2009
- IEEE Transactions on Electron Devices
Effect of collector lateral scaling on performance of high-speed SiGe HBTs with fT>300GHz
- J.-S. Rieh
- M. Khater
- et al.
- 2006
- Electronics Letters
SiGe HBT without Selectively Implanted Collector (SIC) exhibiting f max = 310 GHz and BVCEo = 2 v
- Jae-Sung Rieh
- Marwan Khater
- et al.
- 2006
- IEEE Transactions on Electron Devices
Structure optimization of trench-isolated SiGe HBTs for simultaneous improvements in thermal and electrical performances
- Jae-Sung Rieh
- David Greenberg
- et al.
- 2005
- IEEE Transactions on Electron Devices
Reverse active mode current characteristics of SiGe HBTs
- Jae-Sung Rieh
- Jin Cai
- et al.
- 2005
- IEEE Transactions on Electron Devices