High performance 14nm SOI FinFET CMOS technology with 0.0174μm2 embedded DRAM and 15 levels of Cu metallization
- C.-H.C-H. Lin
- Brian Greene
- et al.
- 2014
- IEDM 2014
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8 results for M. Brodsky
A 0.127 μm2 high performance 65 nm SOI based embedded DRAM for on-processor applications
- G. Wang
- K. Cheng
- et al.
- 2006
- IEDM 2006
Deposited ALD SiO2 high-k/metal gate interface for high voltage analog and I/O devices on next generation alternative channels and FINFET device structures
- S. Siddiqui
- M.M. Chowdhury
- et al.
- 2013
- ECS Meeting 2013
Single wafer cleaning lessons in advanced node gate module development
- David F. Hilscher
- Daniel Jaeger
- et al.
- 2013
- ASMC 2013
A novel, low-cost deep trench decoupling capacitor for high-performance, low-power bulk CMOS applications
- Chengwen Pei
- Roger Booth
- et al.
- 2008
- ICSICT 2008
First microprocessors with immersion lithography
- D. Gil
- T. Bailey
- et al.
- 2005
- SPIE Advanced Lithography 2005
Trilayer development for 193 nm immersion lithography
- Sean Burns
- Martin Burkhardt
- et al.
- 2007
- J. Photopolym. Sci. Tech.
Effect of plasma N2 and thermal NH3 nitridation in HfO2 for ultrathin equivalent oxide thickness
- Min Dai
- Yanfeng Wang
- et al.
- 2013
- Journal of Applied Physics