A Si-Ge HBT technology for the wireless marketplace
- D. Ahlgren
- D.A. Sunderland
- et al.
- 1996
- ESSDERC 1996
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20 results for S.-J. Jeng
50-200 GHz silicon-germanium heterojunction bipolar transistor BICMOS technology and a computer-aided design environment for 2-50+GHz very large-scale integration mixed-signal ICs
- Seshadri Subbanna
- Gregory Freeman
- et al.
- 2002
- Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
A manufacturable poly-emitter graded-SiGe HBT technology for wireless and mixed-signal applications
- D. Nguyen-Ngoc
- D.A. Sunderland
- et al.
- 1996
- Applied Surface Science
Si-Ge heterojunction bipolar technology for high-speed integrated circuits
- D. Ahlgren
- M.M. Gilbert
- et al.
- 1996
- Canadian Journal of Physics
Strain-induced quantum confinement of carriers due to extended defects in silicon
- H. Weman
- B. Monemar
- et al.
- 1990
- Physical Review B
High conductivity polycrystalline silicon obtained by molecular beam deposition
- S.L. Delage
- S.-J. Jeng
- et al.
- 1988
- Applied Physics Letters
Efficiency of oxygen plasma cleaning of reactive ion damaged silicon surfaces
- Gottlieb S. Oehrlein
- Gerald J. Scilla
- et al.
- 1988
- Applied Physics Letters
Hydrogen plasma induced defects in silicon
- S.-J. Jeng
- G.S. Oehrlein
- et al.
- 1988
- Applied Physics Letters
Microstructural studies of reactive ion etched silicon
- S.-J. Jeng
- G.S. Oehrlein
- 1987
- Applied Physics Letters
Evidence of the role of defects near the injecting interface in determining SiO2 breakdown
- P. Olivo
- B. Ricco
- et al.
- 1987
- Applied Physics Letters