The Effect of Trench Corner Shapes on Local Stress Fields : A Three-Dimensional Finite-Element Modeling Study
- Scott R. Stiffler
- Arturo O. Cifuentes
- 1993
- IEEE Transactions on Electron Devices
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20 results for S. Stiffler
A high performance epitaxial SiGe-base ECL BiCMOS technology
- D.L. Harame
- E.F. Crabbe
- et al.
- 1992
- IEDM 1992
Modeling thermal stresses in periodic structures: Some obserwations regarding the boundary conditions
- A.O. Cifuentes
- S. Stiffler
- 1992
- ASME Journal of Electronic Packaging
The role of dislocation-dislocation interactions in the relaxation of pseudomorphically strained semiconductors. II. Experiment-The high-temperature relaxation of ultrahigh-vacuum chemical-vapor-deposited SiGe thin films
- S. Stiffler
- Carol Stanis
- et al.
- 1992
- Journal of Applied Physics
The role of dislocation-dislocation interactions in the relaxation of pseudomorphically strained semiconductors. I. Theory
- S. Stiffler
- Carol Stanis
- et al.
- 1992
- Journal of Applied Physics
Modeling thermal stresses in periodic structures: some observations regarding the boundary conditions
- A.O. Cifuentes
- S. Stiffler
- 1992
- ASME Winter Conference 1992
Interfacial transport kinetics during the solidification of silicon
- S. Stiffler
- P.V. Evans
- et al.
- 1992
- Acta Metallurgica Et Materialia
The thermal stability of SiGe films deposited by ultrahigh-vacuum chemical vapor deposition
- S. Stiffler
- J.H. Comfort
- et al.
- 1991
- Journal of Applied Physics
Interfacial atomic transport in the nucleation of crystalline silicon from the melt
- P.V. Evans
- S. Stiffler
- 1991
- Acta Metallurgica Et Materialia
Oxidation-induced substrate strain in advanced silicon integrated-circuit fabrication
- S. Stiffler
- 1990
- Journal of Applied Physics