High performance 14nm SOI FinFET CMOS technology with 0.0174μm2 embedded DRAM and 15 levels of Cu metallization
- C.-H.C-H. Lin
- Brian Greene
- et al.
- 2014
- IEDM 2014
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20 results for S. Stiffler
A 0.039um2 high performance eDRAM cell based on 32nm high-K/metal SOI technology
- Nauman Z. Butt
- Kevin McStay
- et al.
- 2010
- IEDM 2010
Scaling deep trench based eDRAM on SOI to 32nm and beyond
- G. Wang
- D. Anand
- et al.
- 2009
- IEDM 2009
Trade-offs in the integration of high performance devices with trench capacitor DRAM
- S.W. Crowder
- S. Stiffler
- et al.
- 1997
- IEDM 1997
High temperature stability and relaxation of UHV/CVD SiGe thin films
- S. Stiffler
- Carol Stanis
- et al.
- 1992
- MRS Fall Meeting 1992
A high performance epitaxial SiGe-base ECL BiCMOS technology
- D.L. Harame
- E.F. Crabbe
- et al.
- 1992
- IEDM 1992
Performance analysis and modeling of deep trench decoupling capacitor for 32 nm high-performance SOI processors and beyond
- Balaji Jayaraman
- Sneha Gupta
- et al.
- 2012
- ICICDT 2012
Characterization of novel TiN/HfO2 metal insulator semiconductor stack for 32nm eDRAM
- Puneet Goyal
- Sneha Gupta
- et al.
- 2010
- IEEE International SOI Conference 2010
Improving the power-performance of multicore processors through optimization of lithography and thermal processing
- A. Gabor
- T.A. Brunner
- et al.
- 2007
- SPIE Advanced Lithography 2007
A room temperature 0.1 μm CMOS on SOI
- G. Shahidi
- C. Blair
- et al.
- 1993
- VLSI Technology 1993