Replacement metal gate resistance in FinFET architecture modelling, validation and extendibility
- Ruqiang Bao
- Brian Greene
- et al.
- 2015
- IEDM 2015
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28 results for Patrick W. Dehaven
Understanding and mitigating High-k induced device width and length dependencies for FinFET replacement metal gate technology
- Takashi Ando
- Tenko Yamashita
- et al.
- 2015
- IEDM 2015
Electromigration extendibility of Cu(Mn) alloy-seed interconnects, and understanding the fundamentals
- Takeshi Nogami
- C. Penny
- et al.
- 2012
- IEDM 2012
High reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility
- Takeshi Nogami
- Tibor Bolom
- et al.
- 2010
- IEDM 2010
Thermal oxidation of Cu interconnects capped with CoWP
- J.P. Gambino
- S. Smith
- et al.
- 2005
- MRS Spring Meeting 2005
In-situ study of Ti/TiN stability under nitrogen anneal
- P. DeHaven
- K.P. Rodbell
- et al.
- 1999
- MRS Spring Meeting 1999
Blanket and local crystallographic texture determination in layered Al metallization
- K.P. Rodbell
- J.L. Hurd
- et al.
- 1995
- MRS Fall Meeting 1995
Film crystallographic texture and substrate surface roughness in layered aluminum metallization
- K.P. Rodbell
- V. Svilan
- et al.
- 1996
- MRS Spring Meeting 1996
ALD TaN barrier for enhanced performance with low contact resistance for 14 nm Technology Node Cu Interconnects
- Joyeeta Nag
- Brian A. Cohen
- et al.
- 2015
- ECS Meeting 2015 Phoenix
Bottom oxidation through STI (BOTS) - A novel approach to fabricate dielectric isolated FinFETs on bulk substrates
- K. Cheng
- S.-C. Seo
- et al.
- 2014
- VLSI Technology 2014