Phase-change memory: Feasibility of reliable multilevel-cell storage and retention at elevated temperaturesMilos StanisavljevicA. Athmanathanet al.2015IRPS 2015
A collective relaxation model for resistance drift in phase change memory cellsAbu SebastianDaniel Krebset al.2015IRPS 2015
A 6-bit drift-resilient readout scheme for multi-level phase-change memoryA. AthmanathanMilos Stanisavljevicet al.2014A-SSCC 2014
Using adaptive read voltage thresholds to enhance the reliability of MLC NAND flash memory systemsNikolaos PapandreouThomas Parnellet al.2014GLSVLSI 2014
Modelling of the threshold voltage distributions of sub-20nm NAND flash memoryThomas ParnellNikolaos Papandreouet al.2014GLOBECOM 2014
A versatile platform for characterization of solid-state memory channelsNikolaos PapandreouTh. Antonakopouloset al.2013DSP 2013
Reliable MLC data storage and retention in phase-change memory after endurance cyclingH. PozidisNikolaos Papandreouet al.2013IMW 2013
A framework for reliability assessment in multilevel phase-change memoryH. PozidisNikolaos Papandreouet al.2012IMW 2012
Programming algorithms for multilevel phase-change memoryNikolaos PapandreouH. Pozidiset al.2011ISCAS 2011