Fin formation using graphoepitaxy DSA for FinFET device fabrication
- Chi Chun Liu
- Fee Li Lie
- et al.
- 2015
- SPIE Advanced Lithography 2015
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65 results for Michael Guillorn
Electrical characterization of FinFETs with fins formed by directed self assembly at 29 nm fin pitch using a self-aligned fin customization scheme
- Hsinyu Tsai
- Hiroyuki Miyazoe
- et al.
- 2014
- IEDM 2014
Fabrication of sub-20 nm nanopore arrays in membranes with embedded metal electrodes at wafer scales
- Jingwei Bai
- Deqiang Wang
- et al.
- 2014
- Nanoscale
Two-dimensional pattern formation using graphoepitaxy of PS-b-PMMA block copolymers for advanced FinFET device and circuit fabrication
- Hsinyu Tsai
- Jed W. Pitera
- et al.
- 2014
- ACS Nano
Contamination mitigation of hydrogen silsesquioxane resist processed with Na+-containing developer for nanoscale CMOS device patterning
- Markus Brink
- Isaac Lauer
- et al.
- 2014
- Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Computational lithography platform for 193i-guided directed self-assembly
- Kafai Lai
- Melih Ozlem
- et al.
- 2014
- SPIE Advanced Lithography 2014
Towards electrical testable soi devices using directed self-assembly for fin formation
- Chi Chun Liu
- Cristina Estrada-Raygoza
- et al.
- 2014
- SPIE Advanced Lithography 2014
Dopant-segregation technique for leakage reduction and performance improvement in trigate transistors without raised source/drain epitaxy
- Fei Liu
- Zhen Zhang
- et al.
- 2014
- IEEE Electron Device Letters
A comparative study of fin-last and fin-first SOI FinFETs
- Darsen Lu
- Josephine Chang
- et al.
- 2013
- SISPAD 2013
Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond
- Sarunya Bangsaruntip
- K. Balakrishnan
- et al.
- 2013
- IEDM 2013