Qitao Hu, Paul Solomon, et al.
Nature Communications
A dopant-segregation technique for junction engineering has been demonstrated on trigate transistors using a process flow that does not include raised source/drain epitaxy. It is shown that the dopant-segregation technique reduces the off-state leakage current and improves the on-state performance for NFET devices when compared with control devices built using conventional junction engineering. The dopant-segregation process has no observable impact on PFET device performance. © 1980-2012 IEEE.
Qitao Hu, Paul Solomon, et al.
Nature Communications
Jiahui Yuan, John D. Cressler, et al.
IEEE Transactions on Electron Devices
Da Zhang, Indrek Must, et al.
Applied Physics Letters
Fei Liu, Benjamin Fletcher, et al.
IITC 2013