Asymmetric Double-Gate Ferroelectric FET to Decouple the Tradeoff Between Thickness Scaling and Memory Window
- Zhouhang Jiang
- Yi Xiao
- et al.
- 2022
- VLSI Technology and Circuits 2022
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On the Feasibility of 1T Ferroelectric FET Memory Array
- Zhouhang Jiang
- Zijian Zhao
- et al.
- 2021
- IEEE T-ED