Role of Conductive-Metal-Oxide to HfOx, Interfacial Layer on the Switching Properties of Bilayer TaOx/HfOxReRAM
- T. Stecconi
- Y. Popoff
- et al.
- 2022
- ESSDERC 2022
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3 results for R. Guido
Equivalent electrical circuit modelling of a TaOx/HfOxbased RRAM with optimized resistance window and multilevel states
- T. Stecconi
- Y. Popoff
- et al.
- 2022
- DRC 2022
Filamentary TaOx/HfO2 ReRAM Devices for Neural Networks Training with Analog In-Memory Computing
- Tommaso Stecconi
- Roberto Guido
- et al.
- 2022
- Advanced Electronic Materials