SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz fmax
- S.J. Koester
- R. Hammond
- et al.
- 2001
- IEEE Electron Device Letters
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100 results for Steven J. Koester
Comparative study of self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors with nanometer gate lengths
- Wu Lu
- Steven J. Koester
- et al.
- 2000
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
High performance 0.1 μm gate-length p-type SiGe MODFET's and MOS-MODFET's
- Wu Lu
- Almaz Kuliev
- et al.
- 2000
- IEEE Transactions on Electron Devices
Low-noise SiGe pMODFETs on sapphire with 116 GHz fmax
- S.J. Koester
- R. Hammond
- et al.
- 2000
- DRC 2000
Silicon-on-sapphire for RF Si systems 2000
- I. Lagnado
- P.R. De La Houssaye
- et al.
- 2000
- SiRF 2000
High-frequency noise performance of SiGe p-channel MODFETs
- S.J. Koester
- J.O. Chu
- et al.
- 2000
- Electronics Letters
Extremely high transconductance Ge/Si0.4Ge0.6 p-MODFET's grown by UHV-CVD
- S.J. Koester
- R. Hammond
- et al.
- 2000
- IEEE Electron Device Letters
High transconductance 0.1 μm Ge/Si0.4Ge0.6 Schottky-gated p-MODFETs
- R. Hammond
- S.J. Koester
- et al.
- 1999
- DRC 1999
High-performance SiGe pMODFETs grown by UHV-CVD
- S.J. Koester
- R. Hammond
- et al.
- 1999
- EDMO 1999
p-Type SiGe transistors with low gate leakage using SiN gate dielectric
- W. Lu
- X.W. Wang
- et al.
- 1999
- IEEE Electron Device Letters