High-speed Germanium-on-SOI lateral PIN photodiodes
- G. Dehlinger
- S.J. Koester
- et al.
- 2004
- IEEE Photonics Technology Letters
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100 results for Steven J. Koester
Spin-based quantum dot quantum computing in silicon
- Mark A. Eriksson
- Mark Friesen
- et al.
- 2004
- Quantum Information Processing
80 nm gate-length Si/Si0.7Ge0.3 n-MODFET with 194 GHz fmax
- S.J. Koester
- K.L. Saenger
- et al.
- 2003
- Electronics Letters
Static frequency divider circuit using 0.15 μm gate length Si0.2Ge0.8/Si0.7Ge0.3 p-MODFETs
- D. Singh
- S.J. Koester
- et al.
- 2003
- Electronics Letters
Integrated SiGe and Si device capabilities and trends for multi-gigahertz applications
- G. Freeman
- B. Jagannathan
- et al.
- 2003
- International Journal of High Speed Electronics and Systems
High-quality crystalline layer transfer from a silicon-on-insulator substrate onto a sapphire substrate using wafer bonding
- D. Singh
- L.T. Shi
- et al.
- 2003
- Journal of Electronic Materials
Electron and hole mobility enhancement in strained SOI by wafer bonding
- Lijuan Huang
- Jack O. Chu
- et al.
- 2002
- IEEE Transactions on Electron Devices
Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy
- S.J. Koester
- K. Rim
- et al.
- 2001
- Applied Physics Letters
SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors
- L.J. Huang
- J.O. Chu
- et al.
- 2001
- Applied Physics Letters
Comparative study of self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors with nanometer gate lengths
- Wu Lu
- Steven J. Koester
- et al.
- 2000
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures