M. Arafa, K. Ismail, et al.
IEEE Electron Device Letters
Ge-channel modulation-doped field-effect transistors (MODFET's) with extremely high transconductance are reported. The devices were fabricated on a compressive-strained Ge/Si0.4Ge0.6 heterostructure with a Hall mobility of 1750 cm2/Vs (30,900 cm2/Vs) at room temperature (77 K). Self-aligned, T-gate p-MODFET's with Lg = 0.1 μm displayed an average peak extrinsic transconductance (gmext) of 439 mS/mm, at a drain-to-source bias voltage (Vds) of -0.6 V, with the best device having a value of gm(ext) = 488 mS/mm. At 77 K, values as high as gm(ext) = 687 mS/mm were obtained at a bias voltage of only Vds = -0.2 V. These devices also displayed a unity current gain cutoff frequency (fT) of 42 GHz and maximum frequency of oscillation (fmax) of 86 GHz at Vds = -0.6 V and -1.0 V, respectively.
M. Arafa, K. Ismail, et al.
IEEE Electron Device Letters
G.M. Cohen, P.M. Mooney, et al.
MRS Proceedings 2003
L.J. Klein, K.A. Slinker, et al.
Applied Physics Letters
S. Nelson, K. Ismail, et al.
Applied Physics Letters