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A Novel Dry Selective Etch of SiGe for the Enablement of High Performance Logic Stacked Gate-All-Around NanoSheet DevicesNicolas LoubetT. Devarajanet al.2019IEDM 2019
Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance ApplicationsJ. ZhangS. Pancharatnamet al.2019IEDM 2019
Channel Geometry Impact and Narrow Sheet Effect of Stacked NanosheetChun Wing YeungJingyun Zhanget al.2018IEDM 2018
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