New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low VthDrift at 85 °C and High Endurance 3D Crosspoint Memory : IBM/Macronix PCRAM Joint Project
- Huai-Yu Cheng
- A. Grun
- et al.
- 2022
- IEDM 2022
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79 results for Marinus Hopstaken
Novel Materials and Processes in Replacement Metal Gate for Advanced CMOS Technology
- Ruqiang Bao
- Steven Hung
- et al.
- 2018
- IEDM 2018
First demonstration of high-Ge-content strained-Si1-xGex (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2014
- IEDM 2014
High-performance CMOS-compatible self-aligned In0.53Ga0.47As MOSFETs with GMSAT over 2200 μs/μm at VDD = 0.5 v
- Yanning Sun
- Amlan Majumdar
- et al.
- 2014
- IEDM 2014
Self-aligned III-V MOSFETs: Towards a CMOS compatible and manufacturable technology solution
- Y. Sun
- A. Majumdar
- et al.
- 2013
- IEDM 2013
Properties of phase change materials modified by ion implantation
- Simone Raoux
- Guy M. Cohen
- et al.
- 2011
- MRS Spring Meeting 2011
Ion implantation of carbon and silicon into Ge 2Sb 2Te 5: Ion profiles and post crystallization redistribution
- Guy M. Cohen
- Simone Raoux
- et al.
- 2011
- MRS Spring Meeting 2011
Understanding mobility mechanisms in extremely scaled HfO2 (EOT 0.42 nm) using remote interfacial layer scavenging technique and V t-tuning dipoles with gate-first process
- T. Ando
- M.M. Frank
- et al.
- 2009
- IEDM 2009
Dust-Sized High-Power-Density Photovoltaic Cells on Si and SOI Substrates for Wafer-Level-Packaged Small Edge Computers
- Ning Li
- Kevin Han
- et al.
- 2020
- Advanced Materials
Ultra-low-power sub-photon-voltage high-efficiency light-emitting diodes
- Ning Li
- Kevin Han
- et al.
- 2019
- Nature Photonics