Low-temperature epitaxy of compressively strained silicon directly on silicon substrates
- Davood Shahrjerdi
- Bahman Hekmatshoar
- et al.
- 2011
- Journal of Electronic Materials
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80 results for Marinus Hopstaken
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Technology 2011
Full metal gate with borderless contact for 14 nm and beyond
- Soon-Cheon Seo
- L.F. Edge
- et al.
- 2011
- VLSI Technology 2011
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Circuits 2011
Metastability of hydrogenated amorphous silicon passivation on crystalline silicon and implication to photovoltaic devices
- Bahman Hekmatshoar
- Davood Shahrjerdi
- et al.
- 2011
- IRPS 2011
Band alignment at the Cu2 ZnSn (SxSe1-x) 4 /CdS interface
- Richard Haight
- Aaron Barkhouse
- et al.
- 2011
- Applied Physics Letters
High temperature (1000°C) compatible Y-La-Si-O silicate gate dielectric in direct contact with Si with 7.7 Å equivalent oxide thickness
- Catherine Dubourdieu
- E. Cartier
- et al.
- 2011
- Applied Physics Letters
Evaluation of emitter profiles and lateral uniformity on crystalline silicon photovoltaic cells using scanning capacitance microscopy
- Laura Kosbar
- Jochonia Nxumalo
- et al.
- 2010
- PVSC 2010
Sputtering behavior and evolution of depth resolution upon low energy ion irradiation of GaAs
- Marinus Hopstaken
- Michael Gordon
- et al.
- 2010
- Journal of Vacuum Science and Technology B
Effective schottky barrier lowering for contact resistivity reduction using silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- VLSI-TSA 2010