Surface potential and morphology issues of annealed (HfO 2) x(SiO 2) 1-x gate oxides
- R. Ludeke
- P. Lysaght
- et al.
- 2004
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.