On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices
- J. Westlinder
- T. Schram
- et al.
- 2003
- IEEE Electron Device Letters
Publications
Date
Featured collections
Popular topics
182 results for Eduard Cartier
Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics
- A. Kerber
- E. Cartier
- et al.
- 2003
- IEEE Electron Device Letters
Low Weibull slope of breakdown distributions in high-k layers
- Thomas Kauerauf
- Robin Degraeve
- et al.
- 2002
- IEEE Electron Device Letters
Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates
- L.Å. Ragnarsson
- S. Guha
- et al.
- 2001
- IEEE Electron Device Letters
Imaging hot-electron emission from metal-oxide-semiconductor structures
- Marián Maňkoš
- R.M. Tromp
- et al.
- 1996
- Physical Review Letters
Atomic hydrogen reactions with Pb centers at the (100) Si/SiO2 interface
- J.H. Stathis
- E. Cartier
- 1994
- Physical Review Letters
Breakdown of the semiclassical description of hot-electron dynamics in SiO2
- E.A. Eklund
- F.R. McFeely
- et al.
- 1992
- Physical Review Letters
Direct determination of impact-ionization rates near threshold in semiconductors using soft-x-ray photoemission
- E.A. Eklund
- P.D. Kirchner
- et al.
- 1992
- Physical Review Letters
Soft-x-ray induced core-level photoemission as a probe of hot-electron dynamics in SiO2
- F.R. McFeely
- E. Cartier
- et al.
- 1990
- Physical Review Letters
Process-Induced ReRAM Performance Improvement of Atomic Layer Deposited HfO2 for Analog In-Memory Computing Applications
- Steven Consiglio
- H. Higuchi
- et al.
- 2021
- IMCS 2021