Selective Enablement of Dual Dipoles for near Bandedge Multi-Vt Solution in High Performance FinFET and Nanosheet Technologies
- Ruqiang Bao
- K. Watanabe
- et al.
- 2020
- VLSI Technology 2020
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55 results for Nicolas Loubet
Improved Air Spacer Co-Integrated with Self-Aligned Contact (SAC) and Contact over Active Gate (COAG) for Highly Scaled CMOS Technology
- Kangguo Cheng
- Chanro Park
- et al.
- 2020
- VLSI Technology 2020
BEOL compatible high-capacitance MIMCAP structure using a novel high k material
- P. Jamison
- John Massey
- et al.
- 2020
- IMCS 2020
Self-Allancd Gate Contact (SAGC) for CMOS technology scaling beyond 7nm
- Ruilong Xie
- Chanro Park
- et al.
- 2019
- VLSI Technology 2019
Highly-selective superconformai CVD Ti silicide process enabling area-enhanced contacts for next-generation CMOS architectures
- Nicolas Breil
- A. Carr
- et al.
- 2017
- VLSI Technology 2017
Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET
- N. Loubet
- T.B. Hook
- et al.
- 2017
- VLSI Technology 2017
FINFET technology featuring high mobility SiGe channel for 10nm and beyond
- Dechao Guo
- G. Karve
- et al.
- 2016
- VLSI Technology 2016
Advanced in-line optical metrology of sub-10nm structures for gate all around devices (GAA)
- R. Muthinti
- Nicolas Loubet
- et al.
- 2016
- SPIE Advanced Lithography 2016
Impact of source/drain silicon cap on FDSOI SiGe pMOSFET performance
- E. Augendre
- S. Maitrejean
- et al.
- 2015
- S3S 2015
Si nanowire CMOS fabricated with minimal deviation from RMG FinFET technology showing record performance
- Isaac Lauer
- Nicolas Loubet
- et al.
- 2015
- VLSI Technology 2015