Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma
- Dominik Metzler
- Chen Li
- et al.
- 2016
- JVSTA
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76 results for Eric A. Joseph
Application of cyclic fluorocarbon/argon discharges to device patterning
- Dominik Metzler
- Kishore Uppireddi
- et al.
- 2016
- JVSTA
Challenges of tailoring surface chemistry and plasma/surface interactions to advance atomic layer etching
- Sebastian U. Engelmann
- Robert L. Bruce
- et al.
- 2015
- ECS J. Solid State Sci. Technol.
CMOS-Compatible self-aligned In0.53Ga0.47As MOSFETs with gate lengths down to 30 nm
- Amlan Majumdar
- Yanning Sun
- et al.
- 2014
- IEEE T-ED
MIEC (mixed-ionic-electronic-conduction)-based access devices for non-volatile crossbar memory arrays
- Rohit S. Shenoy
- Geoffrey W. Burr
- et al.
- 2014
- Semiconductor Science and Technology
Fabrication of sub-20 nm nanopore arrays in membranes with embedded metal electrodes at wafer scales
- Jingwei Bai
- Deqiang Wang
- et al.
- 2014
- Nanoscale
Fluorocarbon assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma
- Dominik Metzler
- Robert L. Bruce
- et al.
- 2013
- JVSTA
Pattern transfer of directed self-assembly patterns for CMOS device applications
- Hsin-Yu Tsai
- Hiroyuki Miyazoe
- et al.
- 2013
- J. Micro/Nanolithogr. MEMS MOEMS
Integrated on-chip inductors with electroplated magnetic yokes (invited)
- Naigang Wang
- Eugene J. O'Sullivan
- et al.
- 2012
- Journal of Applied Physics
Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge2Sb2Te 5
- J.S. Washington
- Eric A. Joseph
- et al.
- 2011
- Journal of Applied Physics