Device and circuit performance of SiGe HBTs in 130nm BiCMOS process with fT/fMAX of 250/330GHz
- Vibhor Jain
- T. Kessler
- et al.
- 2014
- BCTM 2014
Publications
Date
Featured collections
Popular topics
3 results for P. Candra
A 0.24 μm SiGe BiCMOS technology featuring 6.5V CMOS, f T/fMAX of 15/14 GHz VPNP, and fT/f MAX of 60/125 GHz HBT
- P. Candra
- M. Dahlström
- et al.
- 2008
- BCTM 2008
A 0.35 μm SiGe BiCMOS technology for power amplifier applications
- Alvin Joseph
- Qizhi Liu
- et al.
- 2007
- BCTM 2007