Device and circuit performance of SiGe HBTs in 130nm BiCMOS process with fT/fMAX of 250/330GHz
- Vibhor Jain
- T. Kessler
- et al.
- 2014
- BCTM 2014
Publications
Date
Featured collections
Popular topics
8 results for Peter Gray
A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications
- John J. Pekarik
- Jim Adkisson
- et al.
- 2014
- BCTM 2014
A novel approach to isolating the edge of the shallow trench isolation in SiGe HBTs for improved device performance
- Renata Camillo-Castillo
- Q. Liu
- et al.
- 2014
- ECSSMEQ 2014
SiGe HBTs in 90nm BiCMOS technology demonstrating fT/fMAX 285GHz/475GHz through simultaneous reduction of base resistance and extrinsic collector capacitance
- Q. Liu
- Jim Adkisson
- et al.
- 2014
- ECSSMEQ 2014
SiGe HBTs in 90nm BiCMOS technology demonstrating 300GHz/420GHz f T/fMAX through reduced Rb and Ccb parasitics
- Renata Camillo-Castillo
- Q. Liu
- et al.
- 2013
- BCTM 2013
A self-aligned sacrificial emitter process for high performance SiGe HBT in BiCMOS
- Q. Liu
- Jim Adkisson
- et al.
- 2012
- ECS Meeting 2012
A 0.24 μm SiGe BiCMOS technology featuring 6.5V CMOS, f T/fMAX of 15/14 GHz VPNP, and fT/f MAX of 60/125 GHz HBT
- P. Candra
- M. Dahlström
- et al.
- 2008
- BCTM 2008
A 0.35 μm SiGe BiCMOS technology for power amplifier applications
- Alvin Joseph
- Qizhi Liu
- et al.
- 2007
- BCTM 2007