A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications
- John J. Pekarik
- Jim Adkisson
- et al.
- 2014
- BCTM 2014
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75 results for Dave Harame
A novel approach to isolating the edge of the shallow trench isolation in SiGe HBTs for improved device performance
- Renata Camillo-Castillo
- Q. Liu
- et al.
- 2014
- ECSSMEQ 2014
SiGe HBTs in 90nm BiCMOS technology demonstrating fT/fMAX 285GHz/475GHz through simultaneous reduction of base resistance and extrinsic collector capacitance
- Q. Liu
- Jim Adkisson
- et al.
- 2014
- ECSSMEQ 2014
SiGe HBTs in 90nm BiCMOS technology demonstrating 300GHz/420GHz f T/fMAX through reduced Rb and Ccb parasitics
- Renata Camillo-Castillo
- Q. Liu
- et al.
- 2013
- BCTM 2013
Improved frequency response in a SiGe npn device through improved dopant activation
- Jim Adkisson
- Marwan H. Khater
- et al.
- 2012
- ECS Meeting 2012
A self-aligned sacrificial emitter process for high performance SiGe HBT in BiCMOS
- Q. Liu
- Jim Adkisson
- et al.
- 2012
- ECS Meeting 2012
SiGe BiCMOS trends - today and tomorrow
- J. Dunn
- D.L. Harame
- et al.
- 2006
- CICC 2006
High-performance silicon-germanium technology
- Seshadri Subbanna
- Greg Freeman
- et al.
- 2005
- DRC 2005
Proton radiation response of SiGe HBT analog and RF circuits and passives
- John D. Cressler
- Michael C. Hamilton
- et al.
- 2001
- IEEE TNS
Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors
- S. Voldman
- P. Juliano
- et al.
- 2000
- EOS/ESD 2000