Approaches to etch resistant 193-nm photoresists: Performance and prospects
- R.D. Allen
- Juliann Opitz
- et al.
- 1999
- SPIE Advances in Resist Technology and Processing 1999
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48 results for Carl E. Larson
High resolution 248 nm bilayer resist
- Q. Lin
- K.E. Petrillo
- et al.
- 1999
- SPIE Advances in Resist Technology and Processing 1999
Experimental method for quantifying acid diffusion in chemically amplified resists
- G.M. Wallraff
- W.D. Hinsberg
- et al.
- 1999
- SPIE Advances in Resist Technology and Processing 1999
Chemistry controlling nanoscale pattern formation by deep UV photolithography
- F.A. Houle
- W.D. Hinsberg
- et al.
- 1999
- ACS Spring 1999
Cyclic olefm resist polymers and polymerizations for improved etch resistance
- R.D. Allen
- Juliann Opitz
- et al.
- 1999
- J. Photopolym. Sci. Tech.
Factors controlling pattern formation in chemically amplified resists at sub-100 nm dimensions
- W.D. Hinsberg
- F.A. Houle
- et al.
- 1999
- J. Photopolym. Sci. Tech.
Positive bilayer resists for 248- and 193-nm lithography
- Ratnam Sooriyakumaran
- Gregory M. Wallraff
- et al.
- 1998
- Microlithography 1998
Platform-dependent properties of 193nm single layer resists
- Robert D. Allen
- Thomas I. Wallow
- et al.
- 1998
- J. Photopolym. Sci. Tech.
Etch selectivity of 4SiMA: Hydroxystyrene based copolymers. silicon chemistry for bilayer resist systems
- G.M. Wallraff
- Carl E. Larson
- et al.
- 1998
- J. Photopolym. Sci. Tech.
The influence of photoacid structure on the design and performance of 193-nm resists
- Robert D. Allen
- Juliann Opitz
- et al.
- 1997
- J. Photopolym. Sci. Tech.