203 μa threshold current strained V-groove lasers
- S. Tiwari
- G.D. Pettit
- et al.
- 1992
- IEDM 1992
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70 results for Sandip Tiwari
Empirical fit to band discontinuities and barrier heights in III-V alloy systems
- Sandip Tiwari
- David J. Frank
- 1992
- Applied Physics Letters
On the role of mobility and saturated velocity in the dynamic operation of p-i-n and metal-semiconductor-metal photodetectors
- Sandip Tiwari
- Michael A. Tischler
- 1992
- Applied Physics Letters
Effects of compressive and tensile uniaxial stress on the operation of AlGaAs/GaAs quantum-well lasers
- Sandip Tiwari
- Richard S. Bates
- et al.
- 1992
- Applied Physics Letters
Lateral Ga0.47In0.53As and GaAs p-i-n Photodetectors by Self-Aligned Diffusion
- Sandip Tiwari
- Jeremy Burroughes
- et al.
- 1992
- IEEE Photonics Technology Letters
1.3 μM Gasb Metal-Semiconductor-Metal Photodetectors
- Sandip Tiwari
- M. Hargis
- et al.
- 1992
- IEEE Photonics Technology Letters
Lateral p-i-n photodetectors with 18 GHz bandwidth at 1.3 μ m wavelength and small bias voltages
- Sandip Tiwari
- Jeremy Burroughes
- et al.
- 1991
- IEDM 1991
Low surface recombination velocity and contact resistance using p +/p carbon-doped GaAs structures
- T.J. De Lyon
- J.A. Kash
- et al.
- 1990
- Applied Physics Letters
Material properties of p-type GaAs at large dopings
- Sandip Tiwari
- Steven L. Wright
- 1990
- Applied Physics Letters
Overshoot in transient and steady-state in GaAs, InP, Ga.47In.53As, and InAs bipolar transistors
- S. Tiwari
- M.V. Fischetti
- et al.
- 1990
- IEDM 1990