Electrical characterization of FinFETs with fins formed by directed self assembly at 29 nm fin pitch using a self-aligned fin customization scheme
- Hsinyu Tsai
- Hiroyuki Miyazoe
- et al.
- 2014
- IEDM 2014
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36 results for Isaac Lauer
Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond
- Sarunya Bangsaruntip
- K. Balakrishnan
- et al.
- 2013
- IEDM 2013
Trigate 6T SRAM scaling to 0.06 μm2
- M. Guillorn
- J. Chang
- et al.
- 2009
- IEDM 2009
Extendibility of NiPt silicide contacts for CMOS technology demonstrated to the 22-nm node
- Kazuya Ohuchi
- Christian Lavoie
- et al.
- 2007
- IEDM 2007
Challenges and opportunities for high performance 32 nm CMOS technology
- J. Sleight
- I. Lauer
- et al.
- 2006
- IEDM 2006
Dynamics of superconducting qubit relaxation times
- M. Carroll
- S. Rosenblatt
- et al.
- 2022
- npj Quantum Information
Hamiltonian Engineering with Multicolor Drives for Fast Entangling Gates and Quantum Crosstalk Cancellation
- K.X. Wei
- Easwar Magesan
- et al.
- 2022
- Physical Review Letters
High-performance superconducting quantum processors via laser annealing of transmon qubits
- Eric J. Zhang
- Srikanth Srinivasan
- et al.
- 2022
- Science Advances
A comparison of short-channel control in planar bulk and fully depleted devices
- Ramachandran Muralidhar
- Jin Cai
- et al.
- 2012
- IEEE Electron Device Letters
Effect of uniaxial strain on the drain current of a heterojunction tunneling field-effect transistor
- Paul M. Solomon
- Isaac Lauer
- et al.
- 2011
- IEEE Electron Device Letters