High reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility
- Takeshi Nogami
- Tibor Bolom
- et al.
- 2010
- IEDM 2010
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41 results for Philip L. Flaitz
Co capping layers for Cu/low-k interconnects
- C.-C. Yang
- P. Flaitz
- et al.
- 2010
- ADMETA 2010
CoWP metal caps for reliable 32 nm 1X Cu interconnects in porous ULK (k=2.4)
- E. Huang
- M. Oh
- et al.
- 2009
- ADMETA 2009
CVD Co and its application to Cu damascene interconnections
- Takeshi Nogami
- J. Maniscalco
- et al.
- 2010
- IITC 2010
Characterization of selectively deposited cobalt capping layers: Selectivity and electromigration resistance
- C.-C. Yang
- P. Flaitz
- et al.
- 2010
- IEEE Electron Device Letters
Endurance improvement of Ge2Sb2Te5-based phase change memory
- Chieh-Fang Chen
- A.G. Schrott
- et al.
- 2009
- IMW 2009
Copper contact metallization using Ru-based barrier liners for 45 nm and 32 nm nodes: Reliability and device performance
- Soon-Cheon Seo
- Chih-Chao Yang
- et al.
- 2008
- ADMETA 2008
Ionized-PVD stacked barrier structure of TaN/TaRu for 32nm BEOL integration
- Takeshi Nogami
- Chih-Chao Yang
- et al.
- 2008
- ADMETA 2008
Effect of Zn doping on SnAg solder microstructure and electromigration stability
- Minhua Lu
- Da-Yuan Shih
- et al.
- 2009
- Journal of Applied Physics
Cr migration on 193nm binary photomasks
- John Bruley
- Geoffrey Burr
- et al.
- 2009
- SPIE Advanced Lithography 2009