Atomic layer deposition of sidewall spacers: Process, equipment and integration challenges in state-of-the-art logic technologies
- Michael Belyansky
- Richard Conti
- et al.
- 2014
- ECS Meeting 2014
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41 results for Philip L. Flaitz
Formation of Si:CP layer through in-situ doping and implantation process for n-type metal-oxide-semiconductor devices
- Shogo Mochizuki
- Rainer Loesing
- et al.
- 2014
- Thin Solid Films
CVD-Co/Cu(Mn) integration and reliability for 10 nm node
- Takeshi Nogami
- M. He
- et al.
- 2013
- IITC 2013
Electrical properties and reliability of ALD TaN barrier for sub-90nmPitch Cu interconnects
- Tibor Bolom
- J. Lee
- et al.
- 2013
- ADMETA 2013
Cu reflows on Ru
- C.-C. Yang
- Baozhen Li
- et al.
- 2013
- ECS Solid State Letters
Reducing density-induced CMP non-uniformity for advanced semiconductor technology nodes
- John H. Zhang
- Wei-Tsu Tseng
- et al.
- 2013
- MRS Spring Meeting 2013
Electromigration extendibility of Cu(Mn) alloy-seed interconnects, and understanding the fundamentals
- Takeshi Nogami
- C. Penny
- et al.
- 2012
- IEDM 2012
Co capping layers for Cu/low-k interconnects
- C.-C. Yang
- P. Flaitz
- et al.
- 2012
- Microelectronic Engineering
Reflow of copper on ruthenium
- C.-C. Yang
- Y. Loquet
- et al.
- 2011
- ADMETA 2011
Characterization of Cu reflows on Ru
- C.-C. Yang
- P. Flaitz
- et al.
- 2011
- IEEE Electron Device Letters