200 mm wafer-scale integration of sub-20 nm sacrificial nanofluidic channels for manipulating and imaging single DNA molecules
- C. Wang
- S.W. Nam
- et al.
- 2013
- IEDM 2013
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20 results for Elizabeth A. Duch
Self-aligned III-V MOSFETs: Towards a CMOS compatible and manufacturable technology solution
- Y. Sun
- A. Majumdar
- et al.
- 2013
- IEDM 2013
Graphene radio frequency devices on flexible substrate
- Wenjuan Zhu
- Damon B. Farmer
- et al.
- 2013
- Applied Physics Letters
Integrated on-chip inductors with electroplated magnetic yokes (invited)
- Naigang Wang
- Eugene J. O'Sullivan
- et al.
- 2012
- Journal of Applied Physics
Enabling SOI-based assembly technology for three-dimensional (3D) integrated circuits (ICs)
- A. Topol
- D.C. La Tulipe
- et al.
- 2005
- IEDM 2005
Charge trapping in aggressively scaled metal gate/high-κ stacks
- E. Gusev
- V. Narayanan
- et al.
- 2004
- IEDM 2004
Aggressively scaled (0.143 μm 2) 6T-SRAM cell for the 32 nm node and beyond
- D. Fried
- J. Hergenrother
- et al.
- 2004
- IEDM 2004
Thermally robust dual-work function ALD-MN x MOSFETs using conventional CMOS process flow
- D.-G. Park
- Z. Luo
- et al.
- 2004
- VLSI Technology 2004
Dual work function metal gate CMOS using CVD metal electrodes
- V. Narayanan
- A.C. Callegari
- et al.
- 2004
- VLSI Technology 2004
Fabrication and Mobility Characteristics of Ultra-thin Strained Si Directly on Insulator (SSDOI) MOSFETs
- K. Rim
- K.K. Chan
- et al.
- 2003
- IEDM 2003