CMOS-Compatible self-aligned In0.53Ga0.47As MOSFETs with gate lengths down to 30 nmAmlan MajumdarYanning Sunet al.2014IEEE T-ED
Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyondSarunya BangsaruntipK. Balakrishnanet al.2013IEDM 2013
Self-aligned III-V MOSFETs: Towards a CMOS compatible and manufacturable technology solutionY. SunA. Majumdaret al.2013IEDM 2013
Demonstration of electroluminescence from strained Ge membrane LEDDonguk NamDavid Sukhdeoet al.2012ISTDM 2012
Electroluminescence from strained germanium membranes and implications for an efficient Si-compatible laserDonguk NamDavid Sukhdeoet al.2012Applied Physics Letters