Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond

Abstract

We present results from gate-all-around (GAA) silicon nanowire (SiNW) MOSFETs fabricated using a process flow capable of achieving a nanowire pitch of 30 nm and a scaled gate pitch of 60 nm. We demonstrate for the first time that GAA SiNW devices can be integrated to density targets commensurate with CMOS scaling needs of the 10 nm node and beyond. In addition, this work achieves the highest performance for GAA SiNW NFETs at a gate pitch below 100 nm. © 2013 IEEE.